Method and apparatus for purifying metallurgical silicon for solar cells

ABSTRACT

A method improves yield of an upgraded metallurgical-grade (UMG) silicon purification process. In the UMG silicon purification process, in a reaction chamber, purification is performed on a silicon melt therein by one, all or a plurality of the following techniques in the same apparatus at the same time. The techniques includes a crucible ratio approach, the addition of water-soluble substances, the control of power, the control of vacuum pressure, the upward venting of exhaust, isolation by high-pressure gas jet, and carbon removal by sandblasting, thereby reducing oxygen, carbon and other impurities in the silicon melt, meeting a high-purity silicon standard of solar cells, increasing yield while maintaining low cost, and avoiding EMF reduction over time. An exhaust venting device for the purification process allows exhaust to be vented from the top of the reactor chamber, thereby avoiding backflow of exhaust into the silicon melt and erosion of the reactor.

CROSS-REFERENCES TO RELATED APPLICATIONS

This application is a continuation of U.S. non-provisional applicationSer. No. 13/187,282, filed on Jul. 20, 2011, which claims priority toChinese application No. 099123949, filed on Jul. 21, 2010, both of whichare incorporated by references in its entirety herein for all purposes.

FIELD OF THE INVENTION

The present invention relates to techniques for growing ultra-puresilicon material. In particular, the present invention provides a methodand device for improving the yield of the upgraded metallurgical-gradesilicon (UMGSi) purification process and, more particularly, totechniques used in the UMGSi purification process for improving productquality and yield. Merely by way of example, the present method andmaterial can be applied to photovoltaic cells, semiconductor integratedcircuits, and other silicon based devices.

BACKGROUND OF THE INVENTION

It is well known that metallurgical silicon can be obtained by heating,in a high-temperature environment, silica (quartz) and the elementcarbon extracted from coal, petroleum or the like. However, the purityof such metallurgical silicon is approximately 99% (2N). Thus, it isnormally used as the starting material for further purification andrefinement such that it reaches a purity of 99.9999% (6N)˜99.999999999%(11N), suitable for use in solar cells as high-purity silicon, which isoften difficult to achieve.

Traditional purifying/refining methods can be roughly divided into twotypes: one type typified by the commonly called “Siemens” method and theother typified by the Upgraded Metallurgical-Grade (UMG) siliconproduction process. For the Siemens method, the quality of the resultingproduct is good and the process is well established, but it has thedisadvantages of high production cost and requiring the use orproduction of poisonous materials.

As for UMG silicon, although the purity is lower than in the Siemensmethod, the cost is lower and the process does not produce or usepoisonous materials. Traditional UMG silicon production processes usethe following techniques for providing inexpensive silicon:

1. Slag formation;

2. One-directional cooling;

3. Vacuum vaporization; or

4. A combination of the above.

Using the above techniques and metallurgical silicon with a purity of 2Nas the starting material, the silicon product can reach a purity of 6N,which is still not pure enough for solar cell applications.

Therefore, UMG silicon (UMG-Si) with a purity of 6N is then used as theraw material for further purification using single-crystal and/or ingotcasting methods to obtain ingots in a shape suitable for solar cellapplications.

However, when examining solar cells produced using UMG-Si as the rawmaterial, it is found that its electromotive force (EMF) varies(decreases) over time in actual usage.

Thus, silicon produced using metallurgical methods is inexpensive buthas the shortcoming that its EMF changes over time.

To overcome this problem, UMG-Si and high-purity silicon (e.g., made bythe Siemens method) are combined to lessen the time-varying EMF problem.Yet, such an approach does not solve the root cause but rather is anexpedient measure.

Despite using Floating Zone (FZ) or Czochralski (CZ) methods on UMG-Sito increase its purity, oxygen contained in the silicon will have anadverse effect on the EMF. In addition, when the amount of oxygencontained is large, crystalline defects will occur even if the amount ofimpurities (e.g., carbon, iron, copper, and nickel) contained is low. Asa result, the EMF of the silicon product will be decreased over time.

Therefore, excess oxygen contained in traditional UMG-Si is the maincause for crystalline defects, and should be reduced. Meanwhile, otherimpurities contained in the silicon must also be minimized forpurification/refinement purposes.

SUMMARY OF THE INVENTION

According to the present invention, techniques for growing ultra-puresilicon material are provided. In particular, the present inventionprovides a method and device for improving the yield of the upgradedmetallurgical-grade silicon (UMGSi) purification process and, moreparticularly, to techniques used in the UMGSi purification process forimproving product quality and yield. Merely by way of example, thepresent method and material can be applied to photovoltaic cells,semiconductor integrated circuits, and other silicon based devices.

In a specific embodiment, the present invention provides a method forforming high quality silicon material for photovoltaic devicessubstantially free from oxygen or other oxygen containing impurities.The method includes transferring a raw silicon material (e.g.,metallurgical Si) and containing carbon impurities to a crucible havingan interior region. The crucible is made of a quartz material, which iscapable of withstanding a temperature greater than 1400° C. The methodincludes subjecting the raw silicon material in the crucible to thermalenergy to cause the raw silicon material to be melted into a liquidstate to form a melted material at a temperature of less than about1400° C. The melted material has an exposed region bounded by theinterior region of the crucible in a specific embodiment. The methodincludes subjecting an exposed inner region of the melted material to anenergy source comprising an arc heater configured above the exposedregion and spaced by a gap between the exposed region and a muzzleregion of the arc heater to cause formation of determined temperatureprofile within a vicinity of an inner region of the exposed meltedmaterial while maintaining outer regions of the melted material at atemperature below a melting point of the quartz material of thecrucible. The method also includes maintaining the crucible during thesubjecting the exposed inner region of the melted material to the energysource in a substantially motionless state. Preferably, an outer regionof the melted material is substantially free from a mixing action in aspecific embodiment. The method includes maintaining a resulting oxygenconcentration within the exposed inner region to a predeterminedconcentration using at least the substantially motionless state of thecrucible and causing an interaction with at least one of the carbonspecies with at least two of an oxygen species from the resulting oxygenconcentration to form a gaseous carbon dioxide. The method includesremoving the gaseous carbon dioxide from the exposed inner region of themelted material and removing one or more other impurities from themelted material to form a higher purity silicon material in thecrucible. Preferably, the substantially motionless state is providedbetween a boundary between the inner region of the crucible and theouter region of the melted material such that the boundary issubstantially free from the mixing action.

Preferably, the method includes outputting an inert gas through a nozzleregion to cause a dimple region within a vicinity of the center regionof the melted material. The method also has a resulting oxygenconcentration within the exposed inner region to about 0.5 E 15atoms/cm3. The saturation concentration of O in molten Si is 1 E 16atoms/cm3; the oxygen concentration in the crucible being a substantialconstant value. The substantially motionless state is characterized by asubstantially constant temperature profile within a vicinity of theboundary between the inner region of the crucible and the outer regionof the melted material.

In a specific embodiment, the inert gas comprises an argon gascharacterized by a flow rate suitable to form the dimple regioncomprising a plurality of recessed regions each of which is separated byan elevated region. Preferably, the method also maintains a motionlessboundary region between the exposed inner region and the interior regionof the crucible. The resulting oxygen concentration is derived from anoxygen species. In a specific embodiment, the nozzle region is coupledto an argon gas source, the nozzle region comprising a ceramic material.In a specific embodiment, the dimple region provides an increasedsurface region for a plume to interact with the melted material. Thedimple region has a depth of at least one centimeter.

In a specific embodiment, the melted material comprises a viscosity of0.7 Pascal-second. In a specific embodiment, the melted materialcomprises a silicon material and a phosphorous species. The meltedmaterial comprises a resulting phosphorous species of 1 ppm and less. Ina specific embodiment, the method also includes the removing of thegaseous carbon dioxide species occurs in an upward manner to preventremixing of the gaseous carbon dioxide species with a portion of themelted. The removing is provided by a pumping device configured to beable to form a pressure gradient to a lower value to prevent remixing ofthe gaseous carbon dioxide species. In a specific embodiment, the methodincludes providing a cover gas to maintain the melted material withinthe crucible. The crucible comprises a width and a depth to facilitate amixing action within the exposed inner region and reduce a mixing actionwithin the exposed outer region of the melted material; wherein thedepth to the width has an aspect ratio of 2:1 (depth:width) and greaterin a specific embodiment. The method includes providing a carrier gasconfigured to cause a portion of evaporated melted material to return tothe melted material. The method also includes using a plurality ofsurface regions to cause a substantial portion of a phosphorus speciesto be exhausted while returning a substantial portion of silicon speciesinto the melted material.

In an alternative specific embodiment, the present invention provides amethod for forming high quality silicon material for photovoltaicdevices substantially free from the impurity carbon. The method includestransferring a raw silicon material and a plurality of carbon species ina crucible having an interior region. The crucible is made of a quartzmaterial, the quartz material being capable of withstanding atemperature greater than 1400° C. The method includes subjecting the rawsilicon material in the crucible to thermal energy to cause the rawsilicon material to be melted into a liquid state to form a meltedmaterial at a temperature of less than about 1400° C. The meltedmaterial has an exposed region bounded by the interior region of thecrucible in a specific embodiment. The method includes subjecting anexposed inner region of the melted material to an energy sourcecomprised of an arc heater configured above the exposed region andspaced by a gap between the exposed region and a muzzle region of thearc heater to cause formation of determined temperature profile within avicinity of an inner region of the exposed melted material whilemaintaining outer regions of the melted material at a temperature belowa melting point of the quartz material of the crucible. The methodincludes applying an inert gas to apply a pressure at a first determinedvalue to the exposed inner region of the melted material and cause aresulting oxygen concentration within the exposed inner region to apredetermined concentration and increasing the pressure from the firstdetermined value to a second determined value to increase the resultingoxygen concentration from a first oxygen value to a second oxygen value.The method includes causing an interaction with at least one of thecarbon species with at least two of an oxygen species from the resultingoxygen concentration to form a gaseous carbon dioxide and removing thegaseous carbon dioxide from the exposed inner region of the meltedmaterial to thereby reduce the resulting concentration of the pluralityof carbon species.

In a specific embodiment, the present invention provides that thecrucible is maintained in a substantially motionless state to maintain aboundary region between the inner region of the crucible and the exposedinner region of the melted material. The method also includes theexposed inner region of the melted material is characterized by theresulting concentration of the plurality of carbon species to less than1 parts per million. The exposed inner region of the melted material hasa resulting oxygen concentration of 0.5 E 14 atoms/cm3. The source ofthe carbon in the raw material is from the tar, coal, or charcoal usedin its production. In a specific embodiment, the second pressure isabout 50 Torr and wherein the first pressure is about 1 Torr. In analternative embodiment, the first pressure of about 1 Torr causes aboiling action within the exposed inner region of the melted material.

Still further, the present invention provides a method for forming highquality silicon material for photovoltaic devices. The method includestransferring a raw silicon material and a plurality of carbon species ina crucible having an interior region, the crucible being made of aquartz material, which is capable of withstanding a temperature of atleast 1400° C. The method also includes subjecting the raw siliconmaterial in the crucible to thermal energy to cause the raw siliconmaterial to be melted into a liquid state to form a melted material at atemperature of less than about 1400° C., the melted material having anexposed region bounded by the interior region of the crucible. Themethod includes subjecting an exposed inner region of the meltedmaterial to an energy source comprising an arc heater configured abovethe exposed region and spaced by a gap between the exposed region and amuzzle region of the arc heater to cause formation of determinedtemperature profile within a vicinity of an inner region of the exposedmelted material while maintaining outer regions of the melted materialat a temperature below a melting point of the quartz material of thecrucible. The method includes providing a plasma stream having avelocity of greater than 1 meter per second within a vicinity of theexposed inner region of the melted material. In a specific embodiment,the method also includes introducing a water species containing aslagging material into the stream of the plasma and interacting thewater species and a portion of the melted material to cause formation ofa glass material to absorb one or more metal impurities from the meltedmaterial to form a thickness of the glass material in the crucible. In aspecific embodiment, the melted material comprises a viscosity of 0.7Pascal-second. In a specific embodiment, the melted material comprisessilicon characterized by a viscosity of 0.7 Pascal-second. Preferably,the method removes the thickness of the glass material after thepurification is finished. In a specific embodiment, the thickness ofglass material comprises silicon dioxide or aluminum dioxide. In aspecific embodiment, the one or more metal impurities is one of copper,iron, manganese, nickel, aluminum, cobalt, chromium, or titanium,combinations thereof, and the like. The thickness of the glass containsFe_(x)O_(y) species. In a specific embodiment, the slag material isselected from at least one of CaCl₂ or MgCl₂. The slag material is watersoluble. Preferably, the water species is H₂O in liquid form or H₂ andO₂ in gas form. In a specific embodiment, the thickness of the glassmaterial is floating on the melted material.

In one or more embodiments, the method also includes other variations.Preferably, the stream of the plasma is provided by outputting an inertgas through a nozzle region to cause a dimple region within a vicinityof the center region of the melted material. The inert gas comprises anargon gas characterized by a flow rate suitable to form the dimpleregion comprising a plurality of recessed regions each of which isseparated by an elevated region. Preferably, the method also maintains aboundary region between the exposed inner region and the interior regionof the crucible. The nozzle region is coupled to an argon gas source.Preferably, the nozzle region comprises a ceramic material. The dimpleregion provides an increased surface region for a plume to interact withthe melted material. Preferably, the dimple region has a depth of atleast one centimeter.

In other embodiments, the method also includes providing a cover gas tomaintain the melted material within the crucible. The method alsoincludes providing a carrier gas configured to cause a portion ofevaporated melted material to return to the melted material. Preferably,the method uses a plurality of surface regions to cause a substantialportion of a phosphorus species to be exhausted while returning asubstantial portion of silicon species into the melted material.Preferably, the melted material comprises a silicon material and aphosphorous species. More preferably, the melted material comprises aresulting phosphorous species of 1 ppm and less.

The present invention proposes a method for improving the yield of anupgraded metallurgical-grade (UMG) silicon purification process, in theUMG silicon (UMGSi) purification process, in a reaction chamber,performing purification by one, all, or a plurality of the followingmeans in the same apparatus at the same time, comprising:

a crucible ratio approach, wherein heat circulation is generated bydensity variations caused by uneven temperature distribution in asilicon melt in a crucible by designing the effective depth of thecrucible to be ½ or more of the diameter of a circular crucible or thelength of the shortest side of a polygonal crucible, so that atemperature difference can be more easily induced in the silicon melt,thus increasing heat circulation and facilitating stirring within thesilicon melt;

the addition of water-soluble substances, wherein calcium chloride(CaCl₂) and magnesium chloride (MgCl₂) are added into the silicon melt;since calcium (Ca) and magnesium (Mg) have the characteristic of easilycombining with other impurities at the polysilicon crystalline grainboundary while Cl has the characteristic of making impurities inert,during oxidation of the silicon melt, the water-soluble substances canbe easily combined with silicon oxide and vitrified to form a slag thatfloats on the surface of the silicon melt along with other impurities,thereby producing high-purity silicon products, eliminating crystallinedefects, and reducing issues with the time-varying electromotive force(EMF) of silicon products;

the control of power, wherein by adjusting a heater's output power, thatis, by gradually reducing the power to control the cooling temperatureof the silicon melt, quartz, which is the main material in the crucible,undergoes a crystalline transformation, so that the solidified siliconafter cooling down can be easily removed from the quartz crucible, thusreducing waste of purified silicon and increasing the yield of thepurification process; in addition, a material is also optionally coatedon a contact interface between the quartz crucible and the silicon meltfor protecting the silicon melt against contamination caused bydiffusion of oxygen and other impurities;

the control of vacuum pressure, wherein the pressure in the reactorchamber is controlled so that carbon contained in the silicon melt andoxygen released by the quartz crucible combine to form carbon oxidegases (CO and CO₂) that can be easily vented outside the chamber,thereby removing oxygen and carbon contained in the silicon melt andalso eliminating crystalline defects in silicon products that wouldotherwise degrade the conversion efficiency of solar cells;

the upward venting of exhaust, wherein exhaust generated in the reactorchamber during the purification process is vented upward and laterallythrough a venting device on top of the crucible to avoid backflow ofcarbon oxide exhaust gases (CO and CO₂) to the silicon melt, so thecarbon content in the silicon melt can be effectively reduced comparedto the downward venting method; in addition, water in the exhaust isprevented from contacting and oxidizing carbon components of the reactorand reducing their lifespan;

isolation by high-pressure gas jet, wherein a concentric high-pressureinjection device is positioned at an angle above the silicon melt,including an inner tube and an outer tube, wherein the inner tubeprovides gases and/or materials necessary for purification to the centerof the silicon melt, so that impurities in the melt will react andvaporize or form slag floating on the surface of the melt, while theouter tube supplies high-pressure injection gas to the silicon melt toeffectively blow the slag away from the surface center, allowing gasesand/or materials to be successfully provided to the silicon melt,thereby improving the efficiency of purification;

carbon removal by sandblasting, wherein porous carbon raw material inthe form of bubbles solidified and attached to the top of low-puritymetallurgical silicon raw material is removed by sandblasting, so as toavoid carbon decomposition and sulfur release from the metallurgicalsilicon raw material during purification in the crucible andcontamination of the apparatus, while at the same time avoidingtime-consuming manual filtering, increasing the yield, and reducingproduct price.

Furthermore, in order to prevent backflow of partially-reacted exhaustinto the silicon melt and avoiding oxidation of the carbon components inthe chamber by the water in the exhaust, the upward and laterallydesigned venting device mentioned above is designed to have a V-shapepath located on top of the crucible, including a horizontal reflectingpart approximately parallel to the surface of the silicon melt at thebottom of the venting device, guiding grooves slanting upward fromeither end of the horizontal reflecting part, and lateral groovesextending horizontally to either end above the guiding grooves. Throughsuch a design, exhaust is upward and laterally vented out of the reactorthrough the venting device. Moreover, since the exhaust vented out inthis way has a high temperature, it can be efficiently utilized in otherapplications via heat exchangers, electrical generators, or combinationsthereof, thereby increasing the efficiency of the present invention.

With the technical means described above, problems in the presentmetallurgical silicon purification process can be solved. Thecrystalline defects induced by oxygen and impurities contained in thesilicon are effectively reduced to enable applications of finishedproducts in fields requiring high efficiency, such as solar cells. Inaddition, the EMF does not degrade over time. Yield is increased byreducing defects and material waste, and cost is kept low whilemaintaining high quality compared to the silicon manufactured by theSiemens method. Furthermore, the materials, gases, and substances usedin the purification process of the present invention are all non-toxicand do not produce toxic by-products, thereby ensuring safety in themanufacturing processes and conforming to environmental standards.

Various additional objects, features and advantages of the presentinvention can be more fully appreciated with reference to the detaileddescription and accompanying drawings that follow.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention can be more fully understood by reading thefollowing detailed description of the preferred embodiments, withreference made to the accompanying drawings, wherein:

FIG. 1( a) is a graph depicting the depth-to-diameter ratio of acrucible and the specific resistance of a product (namely, the ratio ofdifference in impurity concentration to the average impurityconcentration in %) of the present invention.

FIG. 1( b) is a diagram illustrating the diameter and depth of acrucible.

FIG. 2( a) is a graph depicting the temperature curve of a form of priorart that performed programmed control and management of the temperature.

FIG. 2( b) is a drawing showing a temperature curve from using a meansto control power according to the present invention.

FIG. 3 is a graph illustrating the relationship between coolingtemperature under power-controlled cooling of the present invention andconversion efficiency. The x-axis is “time”. For the individual curves,the leftmost curve is “improvement in conversion efficiency=0%” and theright curves are “improvement in conversion efficiency=1˜1.5%”.

FIG. 4 is a graph illustrating relationships between pressure in areactor chamber, carbon content, and degradation in conversionefficiency. The right y-axis indicates “Ratio of conversion efficiencyin %, with respect to the maximum conversion efficiency at about 20Torr”.

FIG. 5 is a schematic diagram depicting the flow of exhaust in atraditional reactor chamber.

FIG. 6 is a cross-sectional diagram depicting a venting device accordingto the present invention and the resulting flow of exhaust in thereactor chamber.

FIG. 7( a) is a diagram illustrating the position of a concentrichigh-pressure injection device of the present invention with respect tothe surface of the silicon melt in the crucible.

FIG. 7( b) is a diagram depicting a cross section of the concentrichigh-pressure injection device of the present invention.

FIG. 8( a) is a photograph of metallurgical silicon raw material beforeremoval of carbon by sandblasting of the present invention.

FIG. 8( b) is a photograph of metallurgical silicon raw material afterremoval of carbon by sandblasting of the present invention.

FIG. 9 shows the temperature profile under arc heater irradiation.

DETAILED DESCRIPTION OF THE EMBODIMENTS

According to the present invention, techniques for growing ultra-puresilicon material are provided. In particular, the present inventionprovides a method and device for improving the yield of the upgradedmetallurgical-grade silicon (UMGSi) purification process and, moreparticularly, to techniques used in the UMGSi purification process forimproving product quality and yield. Merely by way of example, thepresent method and material can be applied to photovoltaic cells,semiconductor integrated circuits, and other silicon based devices. In aspecific embodiment, the present invention is described by the followingspecific embodiments.

The present invention provides a method and device for improving theyield of the metallurgical silicon purification process. As described inthe prior art, during a conventional metallurgical silicon purificationprocess, oxygen and other impurities such as carbon in the silicon thatare not effectively removed can cause defects in the silicon productswhich, when used in solar cells, will cause a decrease in conversionefficiency over time. In view of this, a traditional apparatus formanufacturing single-crystal silicon is improved, allowing massproduction of metallurgical silicon using the purification process at alower cost with a quality comparable to the silicon produced by theSiemens method. More importantly, with such improved process, oxygen andother impurities within the silicon melt can be effectively removed,such that the purified silicon meets the high purity standard for solarcell applications while eliminating the disadvantage of a decrease inconversion efficiency in solar cells over time, increasing process yieldand avoiding production loss.

The present invention addresses the shortcomings mentioned above by thefollowing technical means: a crucible ratio approach, the addition ofwater-soluble substances, the control of power, the control of vacuumpressure, the upward venting of exhaust, isolation by high-pressure gasjet, and carbon removal by sandblasting. In the same apparatus and atthe same time, purification is carried out using one, all, or aplurality of the technical means.

The first purification means adopted by the present invention is thecrucible ratio approach.

FIG. 1( a) is a graph depicting the depth/diameter ratio of a crucibleversus specific resistance of the product (namely, the ratio ofdifference in impurity concentration to the average impurityconcentration in %). FIG. 1( b) is a diagram illustrating the depth anddiameter ratio of the crucible.

It should be noted first that the purification techniques used in thepresent invention are the purification method and device disclosed inTaiwan patent Application Nos. 098138830 and 099104551 filed by the sameapplicant, which are hereby incorporated by reference herein, whereinpurification is achieved by heat circulation of the silicon melt in thecrucible caused by density variation due to the temperature profileacross the silicon melt.

However, a conventional crucible design has a relatively shallow depthwith respect to its diameter. The reason is that a traditionalpurification process uses one-directional cooling purification based onsegregation constant theory, so a large crucible depth hinders uniformand complete cooling of the silicon melt therein. In contrast, in themethod of single-crystal silicon pulling, the crucible depth is lessrelevant than is the speed of silicon melt transitioning from liquidusto solidus at the solidus-liquidus interface.

In addition, in order to obtain a uniform density of the silicon melt, atraditional method includes mixing by injecting bubbles from the bottomof the crucible or mechanical mixing by a stirring rod. Although thesetwo mixing methods allow effective stirring, there are still problems tobe overcome in actual applications thereof. For example, in the formercase, there are problems such as leaking of the silicon melt, thematerial and connection of a high-pressure air cylinder, and fractureupon cooling; in the latter case, in order to stir at the surface of thehigh-temperature crucible, there are problems such as contamination ofthe melt by the material of the stirring rod, the strength of thematerial under high-temperature operation, and uniformity of stirring.

Compared to the traditional methods, the present invention designs thecrucible in such a way that the effective depth is ½ or more of thediameter (in the case of a circular crucible) or the length of theshortest side (in the case of a polygonal crucible), as shown in FIG. 1(b), wherein the effective depth (H) is ½ or more of the diameter (D) ofthe crucible. In doing so, temperature difference in the melt in thecrucible (1) can be more easily obtained, which causes heat circulationand thus stirring/purification of the silicon melt in the crucible (1).If the crucible (1) is shallower, the temperature difference between itstop and bottom cannot be widened as much as in a deeper crucible (1).Thus, in terms of circulation, a shallower crucible has poor heatcirculation, and a deeper crucible has better heat circulation.

The above conclusion has been proven by experiments done by the inventorusing different ratios of crucible depth (H) and diameter (D). Therelationship of the depth/diameter ratio and the specific resistance ofthe product can be seen in FIG. 1( a), wherein the vertical axisindicates the difference in specific resistance (%) (namely, the ratioof difference in impurity concentration to the average impurityconcentration in %), and the horizontal axis indicates the ratio ofdepth to diameter of the crucible.

Experiment One:

A high-purity metallurgical silicon is inserted in a quartz crucible (1)with a diameter (D) of 12 inches and a height (H) of 5 inches, and boronis added to obtain a specific resistance of 10Ω, and then it is heatedto 1450° C. In this case, since the permeation of boron into the siliconmelt depends only on the concentration gradient, even after two hours,the difference in local resistance is still above 100%.

Experiment Two:

Similar to experiment one, a high-purity metallurgical silicon isinserted in a crucible (1) except its height (H) is changed to 7 inches.In this case, after two hours, the difference in local resistance isreduced to 30%.

Experiment Three:

Similar to experiment one, the high-purity metallurgical silicon isinserted in a crucible (1) except its height (H) is changed to 9 inches.In this case, after two hours, the difference in local resistance isreduced to 10%.

It can be seen from the above experiments that the ratio of the height(H) to the diameter (D) of the crucible significantly affects thecirculation (and thus uniformity of stirring) of the melt.

The second purification means adopted by the present invention is theaddition of water-soluble substances.

As described in the prior art, in the traditional UMG purificationprocess, one method of purification is the so-called “slag formation”:combining impure metal oxide in the melt to form vitrified substancesand letting the vitrified substances float on the surface of the melt.However, slag formation has the disadvantage of difficult or incompletevitrification of the impurities.

In order to remove impurities generated by temperature or compoundchange in the melt, the inventor observed the effect of water on siliconpurification; that is, water can oxidize the metal impurities and formvitrified substances in the silicon melt. For more efficient removal ofimpurities, the present invention obtains high-purity silicon product byadding substances to the silicon melt, such as calcium (Ca) andmagnesium (Mg), which are water-soluble and do not affect the conversionefficiency of the solar cell, and chlorine (Cl), that has been proven tomake impurities inert in the manufacturing process of semiconductordevices. In other words, CaCl₂ and MgCl₂ are added to the silicon melt.Ca and Mg have the characteristic of easily combining with otherimpurities at the polysilicon crystalline grain boundary, while Cl hasthe characteristic of making impurities inert. As a result, duringoxidation of the silicon melt, these water-soluble substances combinewith silicon oxide to form vitrification, floating on the surface of themelt along with other impurities, which can be removed after cooling.This eliminates crystalline defects and reduces the issue of thetime-varying EMF of the silicon product.

Simply put, the reasons for using calcium (Ca) and magnesium (Mg)chloride in the present invention are as follows:

1. They are water-soluble, that is, they can more uniformly and easilydissolve in water than powder;

2. The chlorination of impurities in the silicon improves their abilityto vaporize from the silicon melt, thereby making purification easy; and

3. In the production process of semiconductor devices, chlorine is oftenused as an impurity getter, the effect of which is well-known (makingimpurities inert). It also eliminates crystallization defects.

This technical means has been proven by the inventor through actualexperiments.

Conditions:

CaCl₂ and MgCl₂ of a weight percent of 0.1% are mixed in water to form asolution, and the solution is continuously injected into a 10-kg siliconmelt at a speed of 10 cc/min for 2 hours.

Result:

Compared to no addition of water-soluble Ca, Mg, CaCl₂ or MgCl₂, thedistribution of impurities in the silicon is improved from about ±40% to±10%, and the time-varying EMF conversion efficiency is improved by 50%or greater.

The third purification means adopted by the present invention is thecontrol of power.

FIG. 2( a) is a graph illustrating a temperature curve of a form ofprior art that performed programmed control and management of thetemperature. FIG. 2( b) is a drawing showing a temperature curve usingthe control of power means according to the present invention.

In the present invention, since the silicon melt is mainly cooled downin the crucible (1), the purified silicon is in the crucible (1).However, the quartz crucible (1) reacts with the silicon melt such thatthe melt may adhere to the crucible (1) and be difficult to remove fromthe crucible (1). This reduces the amount of purified silicon productand lowers the yield.

In order to prevent this, usually in one-directional cooling based onsegregation in the casting processing, sintered quartz (rather than theordinary fused quartz) is used as the crucible material, and the insideis coated with silicon nitride powder. However, the impurities containedin silicon nitride may diffuse into and contaminate the silicon melt.After studying the crystallization transformation of quartz in detail,the inventor found that when the lattice constant changes at around1470° C. corresponding to the crystallization transformation,Cristobalite will transform into Tridymite. In this temperature region,the output power of the heater rather than the temperature iscontrolled, i.e., power control is performed for cooling. The rate ofcooling is very slow at, for example, 0.1˜0.01° C./min. Since theexpansion coefficient of crystallization transformation of quartz ischanged, the solidified silicon can be easily peeled off the quartzcrucible (1) even without any silicon nitride. In this way, loss of thepurified silicon product can be reduced and yield can be improved. Inaddition, during the slow cooling process, the silicon melt can besimultaneously purified by one-directional cooling based on segregation.

Moreover, in the present invention, a material that can hinder andcontrol diffusion and melting of oxygen and impurities can also becoated on the contact interface of the silicon melt and the quartzcrucible (1) to prevent oxygen or impurities released by the quartzcrucible (1) from contaminating the silicon melt. This material can besilicon nitride powder, for example.

Referring to FIGS. 2( a) and 2(b), FIG. 2( a) illustrates a temperaturecurve with respect to time when cooling the silicon melt using theconventional temperature controlling method (PID temperature control).Since the actual temperature repeatedly overshoots and undershoots asshown in the drawing, that is, due to periodic adjusting of thetemperature up and down, the contact interface of the silicon melt andthe crucible will be shifted. Oxygen generated from the quartz cruciblewill continuously diffuse into the melt, and the conversion efficiencyof the silicon product will be degraded. Furthermore, crystal growing ofthe silicon melt is also adversely affected by these temperaturevariations. In contrast, as shown in FIG. 2( b), using the powercontrolling method of the present invention, temperature variations areeliminated, which improves the homogeneity of silicon crystal growth andvariation in oxygen contained in the silicon.

Moreover, in order to increase the efficiency of the solar cell and thepurity of the purified silicon product, it is necessary to reduce thecrystalline grain boundary to obtain larger crystalline grains, and toremove vitrified impurities between the grain boundaries.

In order to achieve this, the temperature management for growth ofcrystalline nuclei and the minimization of grain boundaries is veryimportant. Minimization of grain boundaries is effective for removal ofvitrified impurities. The addition of water-soluble chloride substancescan improve the removal even further.

For the optimization of crystalline nuclei growth and grain boundarymanagement, and for the effective vaporization of vitrified impuritiesbetween grain boundaries, the inventor has found that addingwater-soluble chloride substances as previously described and keeping acertain temperature region and/or cooling at a very slow rate can beadvantageous. For example, the present invention performs output powercontrol rather temperature control to cool at a very slow rate, forexample, 0.1˜0.01° C./min. It is also found that this temperature regionis most effective at a range of ±40° C. from the solid-liquid interfacetemperature of the silicon melt. A solar cell made from the siliconproduct produced in such conditions can increase the efficiency by 1.5%compared to a traditional product, and without reduction of EMF overtime.

FIG. 3 is a graph illustrating the temperature of the cooling siliconwith time. Increasing the temperature range around which the powercooling is started (right most curves) improves the conversionefficiency compared to the limited use of power cooling (right mostcurve). The improvement in efficiency of material purified using theextended range of power cooling is 1.0˜1.5%. The increased range oftemperatures for power cooling increases the silicon grain size,reducing the total impurities trapped at the grain boundaries. The powercooling ideally starts at +20˜40° C. above and stops at −20˜40° C. belowthe solid-liquid interface temperature. The fourth purification meansadopted by the present invention is the control of vacuum pressure.

FIG. 4 is a graph illustrating relationships between pressure in thereactor chamber, carbon content, and degradation in conversionefficiency.

The inventor has found through research that degradation in conversionefficiency in solar cells is caused by expansion of crystalline defectsin the silicon and less tolerance to impurity contamination, mainlybecause oxygen and carbon contaminants may vary over time. The inventoralso found that when oxygen content in silicon is low, even if carboncontent is high, the variation of efficiency in silicon over time issmall; when oxygen content in silicon is high, even if carbon content islow, the variation of efficiency in silicon over time is large. Fromthis, it can be assumed that the main cause of degradation in conversionefficiency of solar cells is the oxygen content of the silicon. It isworth noting that excessive carbon content in the silicon also hasnegative impact on the solar cells, so carbon needs to be eliminatedalong with oxygen. In order to remove carbon in the silicon, thetemperature has to be raised to above 3000° C., which is difficult.Thus, there is a need for a simple method for removing both oxygen andcarbon contained in the silicon.

Carbon in the silicon melt is usually introduced as hydrocarbonscontained in inert gas (e.g., argon gas) for preventing oxidation of themelt during the manufacturing process. Also, vacuum leaks in the reactorallows oxygen to penetrate and react with the high-temperature carboncomponents in the device to form CO and CO₂, which contact and diffuseinto the silicon melt, such that carbon is introduced into the melt.Oxygen is basically supplied from the quartz crucible (SiO₂) to thesilicon melt when they are in contact with each other. Therefore, if onecan make the thus generated oxygen and carbon contact each other in thecrucible (1) and form CO and CO₂, these gases can be pumped out, and theoxygen and carbon in the melt could be reduced.

In order to react the oxygen and carbon efficiently in the silicon melt,the present invention uses the heat circulation induced by temperaturegradients in the melt. As a result, oxygen and carbon are both reduced.

The inventor has found through experiments an example of conversionefficiency can be obtained by performing pressure control under thefollowing conditions:

Pressure: 1 Torr

Purified Carbon Content: 0.1 ppma

Time: 5 hours

In comparison, a pressure of 300 Torr is traditionally kept in thereactor chamber, and the carbon content is 5 ppma. See, for example,FIG. 3.

The conversion efficiency of a solar cell made from silicon with the lowcarbon and oxygen content produced by this control method can obtain animprovement of 50% compared to a chamber kept at low pressure.

The relationships between the actual pressure inside the chamber, carboncontent, and degradation in conversion efficiency are shown in FIG. 4.As depicted by the graph, under lower pressure, since the interfacebetween the silicon melt and the crucible (1) provides a large amount ofoxygen, carbon in the silicon combines with oxygen to form carbonmonoxide and dioxide gas (CO and CO₂, respectively), which is released,and thus the carbon content is reduced and the conversion efficiencyincreased; that is, when supplying oxygen from the crucible (1) isdesired and the chamber pressure is kept at a low pressure of 1 Torr,the interface between the silicon melt and the quartz crucible willabruptly produce a large amount of oxygen, and when the pressure iscontrolled at a higher pressure region of 50 Torr, carbon and oxygenmore easily combine and form CO and CO₂. The oxygen and carbon contentsin the chamber are thus removed by changing the pressure, therebyimproving the conversion efficiency.

The fifth purification means adopted by the present invention is theupward venting of exhaust.

FIG. 5 is a schematic diagram depicting the traditional flow of exhaustin the reactor chamber. FIG. 6 is a schematic diagram depicting theventing device according to the present invention and the resulting flowof exhaust in the reactor chamber.

The crystalline silicon used in solar cells is typically processed by asingle-crystal-pulling device or a casting reactor into suitable shapes.Based on structural reasons, purifying gases are provided from the topof the reactor to the silicon melt, and exhaust is let out fromunderneath. Thus the purifying gases contact the surface of the siliconmelt while rising through other flow paths, and then pass through thecarbon components before being let out from underneath.

As shown in FIG. 5, an exhaust flow path in a conventional reactor isshown. The reactor is supplied with gases required for purification froman injecting tube (2) above the crucible (1) to the surface of thesilicon melt (3), and exhaust generated (as shown by arrows) risesthrough the flow paths in the reactor and passes between the carboncomponents (4) in the reactor and is let out through exhaust pipes (5).However, since the exhaust that comes into contact with the carboncomponents (4) contains water, the water will oxidize the carboncomponents (4) and reduce their lifespan. In addition, since the exhaustalso contains CO and CO₂, they may be brought back to the silicon melt(3) through back-diffusion, contaminating the silicon with carbon.

The present invention prevents carbon increase in the silicon by ventingthe exhaust upward and laterally instead of downward. As shown in FIG.6, a specially designed V-shape venting device (6) allows exhaust (shownby the arrows) generated in the silicon melt (3) in the crucible (1) tobe vented upward and laterally out of the reactor, preventing CO and CO₂in the exhaust from flowing back toward and contaminating the siliconmelt (3). The carbon content in the silicon melt is reduced by 20% ormore compared to downward venting. Also, the non-uniformity of carboncontent in product batches is reduced by 30% or more. Compared todownward venting, other effects achieved by this high-temperatureventing include efficiently utilizing the high-temperature exhaustthrough heat exchangers, electrical generators, or combinations thereof,for other uses, thus enhancing the overall thermal efficiency. Inaddition, using the above method, water contained in the exhaust willnot contact and oxidize the carbon components (4) in the reactor andreduce their lifespan.

In order to achieve the above goal, the present invention provides anupward and lateral venting device (6) positioned above the crucible (1).The venting device (6) has an roughly V-shaped path, including ahorizontal reflecting part (61) approximately parallel to the surface ofthe silicon melt (3) at the bottom of the V structure, guiding grooves(62) slanting upward from either end of the horizontal reflecting part(61), and lateral grooves (63) extending horizontally to either endabove the guiding grooves (62). Through such a design, when the reactorproduces exhaust, it will be concentrated and reflected by thehorizontal reflecting part (61) towards the guiding grooves (62) at bothends. Due to the principle of elevation of high-temperature exhaust,exhaust will be guided in the guiding grooves (62) towards the abovelateral grooves (63) at both ends, and from there it will be vented outof the reactor through the above horizontally extending lateral groovesat both ends. In this way, exhaust will not flow back towards anddiffuse into the silicon melt (3), ensuring the quality of the purifiedsilicon. In addition, exhaust will not be in contact with the carboncomponents (4) of the device, which would otherwise shorten the lifespanof the device due to oxidation.

The sixth purification means adopted by the present invention is theisolation by high-pressure gas jet.

In the purification process using low-purity metallurgical silicon asthe starting material, impurities react with gases and/or materials usedin purification to vaporize or become vitrified to form slag floating onthe surface of the silicon melt (3).

Impurities floating on the surface of the silicon melt (3) may hinderpurification during continuous purification processes. For example, inTaiwan patent application nos. 098138830 and 099104551 filed by the sameapplicant, a purification method is proposed in which purifying gasesare delivered to the surface of the silicon melt by high-pressureinjection tubes, which allows a dimple to be formed on the surface ofthe melt, thereby increasing the contact area of H₂O and the stirringeffect of the heat circulation. However, the floating substances formedby vitrified impurities in the silicon melt may hinder the operation ofthe high-pressure purifying gases and thus should be eliminated.

As shown in FIGS. 7( a) and 7(b), the present invention proposes aconcentric high-pressure injection device (7), including an inner tube(71) and an outer tube (72), positioned above the surface of the siliconmelt (3) at an angle. The inner tube (71) provides gases and/ormaterials necessary for purification to the center of the silicon melt(3) in a straight line, so that impurities in the melt (3) will reactand vaporize or form slag (8) floating on the surface of the melt (3).At the same time, the outer tube (72) supplies high-pressure injectiongas to the silicon melt (3) to effectively blow the slag (8) away fromthe surface center, allowing gases and/or materials necessary forpurification provided by the inner tube (71) to successfully reach thecenter of the silicon melt (3), thereby facilitating purification byforming a dimple. Using this method, the purification efficiency can beeffectively increased by 30% or more.

The seventh purification means adopted by the present invention iscarbon removal by sandblasting.

In order to prepare low-purity metallurgical silicon as the raw materialfor manufacturing solar-grade silicon, an impurity attached or adheringto the metallurgical silicon raw material will need to be removed, whichpresents some challenges in the actual implementation.

In general, low-purity metallurgical silicon is produced by reducingquartz and carbon at high temperature. The main component of quartz issilica (SiO₂). Carbon is used as a reducing agent to produce siliconfrom silica. The carbon source is usually a product of coal orpetroleum, such as pitch, tar, or asphalt. At high temperature, silicareacts with carbon in a reduction process to form metallurgical silicon.

In this process, a carbon raw material is added in a quantity that ismore than needed for reducing silica. The carbon raw material isattached to the metallurgical silicon in the form of unreacted carbon.When this unreacted carbon flows out of the reactor, some will reactwith oxygen in the air to form gases such as CO and CO₂ and diffuse intothe air, and those gases not coming into contact with the air willsolidify as bubbles on the surface of the metallurgical silicon. As aresult, when flowing out of the reactor, the top surface of themetallurgical silicon will appear to be porous, due to the attachedcarbon raw materials. FIG. 8( a) is a photograph of a grown low-puritymetallurgical silicon raw material without carbon removal. Thephotograph shows that the carbon raw material is attached to the surfaceof the metallurgical silicon in the form of bubbles.

When this metallurgical silicon raw material with the carbon rawmaterial attached is inserted into the crucible for heating and pressurereduction for purification, the coal will decompose and release sulfuralong with carbon, which will contaminate the reactor apparatus to theextent that some parts of the process will need to be suspended.

In order to overcome this, usually before the purification process,those metallurgical silicon raw materials with the carbon raw materialattached are discarded manually. However, this approach not only istime-consuming but also reduces the yield of the purification process,resulting in a higher price of the metallurgical silicon raw materials.

To solve this problem, the present invention uses a sandblastingtechnique to remove the solidified bubbles on the top of a low-puritymetallurgical silicon raw material, thereby avoiding the release ofsulfur from coal decomposition and contamination of the apparatus duringthe purification process, and eliminating manual filtering and waste ofthe materials.

The sandblasting of the present invention uses glass powder as theblasting material. The particle size of the powder selected is No. 20 to30 MESH, and a good blasting effect can be realized at a blastingpressure of 5˜8 kg/cm². After sandblasting, the carbon raw materialattached to the surface of the metallurgical silicon raw material can beeffectively removed, as shown in a photograph of metallurgical siliconafter sandblasting in FIG. 8( b). Using such technique, waste ofmetallurgical material can be avoided, yield can be increased, andproduction cost can be reduced.

In a specific embodiment, the present invention provides for a methodand apparatus illustrating a temperature profile under arc heaterirradiation. We have demonstrated that oxygen will be supplied by thecrucible. When the silicon (Si) is saturated with oxygen, diffusion ofoxygen from the crucible into the Si will stop. Of course, there can beother variations, modifications, and alternatives.

In an alternative specific embodiment, process pressure is kept at 1.0Torr and then at 50 Torr. The oxygen concentration in Si changes from 1E 15/cm3 to 0.5 E 15/cm3. The carbon concentration is reduced from 100ppm to approximately 0.5 ppm. Again, there can be other variations,modifications, and alternatives.

In still an alternative embodiment, the distance from 8 cm to 15 cm tocreate the temperature profile is provided. The water volume supply rateis 10 mL/min in this embodiment. The slagging material is CaCl2 andMgCl2 in this embodiment. Glass material as slagging material removesmetal impurities as oxides which are formed in a reaction with water,forming a metal oxide:SiO2 glass (MSG). The thickness of the MSG is 1˜50mm. Again, there can be other variations, modifications, andalternatives.

By using one, all or a plurality of the technical means described abovein the UMG silicon purification process, further purification andremoval of oxygen, carbon, and impurities can be achieved, and theresulting silicon product is capable of meeting the standards forquality and efficiency over time at low production and high yield,completely replacing the traditional metallurgical silicon ingot castingprocess. In one or more embodiments, the present invention may alsoincludes one or more of the following elements, which have beensummarized below.

In a specific embodiment, the present invention provides a method forimproving yield of an upgraded metallurgical-grade (UMG) siliconpurification process, in the UMG silicon (UMGSi) purification process,in a reaction chamber, performing purification by one, all or aplurality of the following means in the same apparatus at the same time.The means may include, among others, a crucible ratio approach, whereinheat circulation is generated by density variations caused by uneventemperature distribution in a silicon melt in a crucible by designingthe effective depth of the crucible to be ½ or more of the diameter ofthe crucible (circular crucible). The means may also include theaddition of water-soluble substances, wherein calcium chloride (CaCl₂)and magnesium chloride (MgCl₂) of a predetermined weight percent aremixed with water to form a solution, which is then continuously injectedinto the silicon melt for a predetermined period of time and in apredetermined amount, such that the solution combines with the siliconoxide in the silicon melt and vitrifies, floating on the surface thesilicon melt along with other impurities, thereby eliminatingcrystalline defects and reducing issues with time-varying electromotiveforce (EMF) of silicon products. The control of power, wherein thecrucible is heated to approximately 1470° C., a heater's output power iscontrolled in this temperature region rather than using temperaturecontrol, that is, the silicon melt is cooled by controlling the power ata very slow continuously cooling rate, so that the solidified siliconafter cooling down is easily removed from the quartz crucible due tochanges in the expansion coefficient of the crucible, and a material isalso optionally coated on the contact interface between the quartzcrucible and the silicon melt for protecting the silicon melt againstcontamination from the crucible. The control of vacuum pressure, whereinthe pressure in the reactor chamber is controlled so that carboncontained in the silicon melt and oxygen released by the quartz cruciblecombine to form carbon oxide gas (CO and CO₂) that can be easily ventedoutside the chamber, thereby removing oxygen and carbon contained in thesilicon melt. The

upward venting of exhaust, wherein exhaust generated in the reactorchamber during the purification process is vented upward and laterallythrough vent on top of the crucible to avoid backflow of carbon oxideexhaust gases (CO and CO₂) toward the silicon melt, and to avoid waterin the exhaust contacting and oxidizing carbon components of thereactor. The means also include isolation by high-pressure gas jet,wherein, by means of an injection device composed of two concentrictubes, necessary purifying substances are provided at an angle with highpressure to the center of the silicon melt, pushing slag away from thecenter of the silicon melt so that the purifying substances areeffectively delivered to the silicon melt and carbon removal bysandblasting, wherein porous carbon raw material in the form of bubblesthat is solidified and attached to the bottom of low-puritymetallurgical silicon raw material is removed by sandblasting.

Depending upon the embodiment, the effective depth of the crucible inthe crucible ratio approach is ½ or more of the length of the shortestside of the crucible surface (polygonal crucible). Additionally, theCaCl₂ and MgCl₂ of weight percent of 0.1% are mixed in water to form thesolution, and the solution is continuously injected into the 10-kgsilicon melt at a speed of 10 cc/min for a specified period of time. Thecooling rate in the control of power means is 0.1˜0.01° C./min in aspecific embodiment In a specific embodiment, the temperature region inthe control of power means is ±40° C. from the solid-liquid interfacetemperature of the silicon melt.

In a specific embodiment, the material coated on the contact interfacebetween the quartz crucible and the silicon melt in the control of powermeans is silicon nitride powder. The, in the control of vacuum pressuremeans, under lower pressure, since the interface between the siliconmelt and the quartz crucible provides a large amount of oxygen, carboncontained in silicon combines with oxygen to form carbon oxide gas (COand CO₂), which is released, and the carbon content is reduced and theconversion efficiency increased. In a specific embodiment, in thecontrol of vacuum pressure means, when the chamber pressure is kept at10˜50 Torr for a specified period of time, the carbon content in thesilicon melt is reduced to 0.1˜1 ppmw. As an example, See FIG. 4.

In the isolation by high-pressure gas jet means, the high-pressureinjection device includes an inner tube and an outer tube, and ispositioned above the surface of the silicon melt at an angle; whereinthe inner tube provides gases and/or materials necessary forpurification to the center of the silicon melt in a straight line, sothat impurities in the melt will react and vaporize or form slagfloating on the surface of the melt; and meanwhile, the outer tubesupplies high-pressure injection gas to the silicon melt to effectivelyblow the slag away from the surface center, allowing gases and/ormaterials necessary for purification provided by the inner tube tosuccessfully reach the center of the silicon melt, thereby facilitatingacceleration of purification by forming a dimple. In a specificembodiment, the sandblasting material means is glass powder, and theparticle size of the powder selected is No. 20 to 30 MESH, andsandblasting is performed at a blasting pressure of 5˜8 Kg/cm².

An exhaust venting device that is applicable to the upward venting ofexhaust means in claim 1 for venting exhaust in an upward and lateralfashion, the exhaust venting device being designed to have a V-shapedpath located on top of the crucible, including a horizontal reflectingpart approximately parallel to the surface of the silicon melt at thebottom of the venting device, guiding grooves slanting upward fromeither end of the horizontal reflecting part, and lateral groovesextending horizontally to either end above the guiding grooves; throughsuch a design, exhaust is first concentrated and then reflected by thehorizontal reflecting part towards the guiding grooves at both ends, andfrom there it is vented out of the reactor through the abovehorizontally extending lateral grooves at both ends.

It is also understood that the examples and embodiments described hereinare for illustrative purposes only and that various modifications orchanges in light thereof will be suggested to persons skilled in the artand are to be included within the spirit and purview of this applicationand scope of the appended claims.

What is claimed is:
 1. A method for forming high quality siliconmaterial for photovoltaic devices, the method comprising: transferringraw silicon material and a plurality of carbon species in a cruciblehaving an interior region, the crucible being made of a quartz material,the quartz material being capable of withstanding a temperature of atleast 1400° C.; subjecting the raw silicon material in the crucible tothermal energy to cause the raw silicon material to be melted into aliquid state to form a melted material at a temperature greater than1400° C., the melted material having an exposed region bounded by theinterior region of the crucible; subjecting an exposed inner region ofthe melted material to an energy source comprising an arc heaterconfigured above the exposed region and spaced by a gap between theexposed region and a muzzle region of the arc heater to cause formationof a temperature profile within a vicinity of an inner region of theexposed melted material while maintaining outer regions of the meltedmaterial at a temperature below a melting point of the quartz materialof the crucible; providing a plasma stream through a concentrichigh-pressure injection device configured at an angle, the concentrichigh-pressure injection device having an inner tube and an outer tube,the plasma stream being provided through the inner tube in a straightline, the plasma stream having a velocity of greater than 1 meter persecond and being provided within a vicinity of the exposed inner regionof the melted material; introducing a water species comprising aslagging material into the stream of the plasma; interacting the waterspecies and a portion of the melted material to cause formation of aglass material to absorb one or more metal impurities from the meltedmaterial to form a thickness of the glass material in the crucible;providing a high-pressure injection gas through the outer tube of theconcentric high-pressure injection device, wherein the high-pressureinjection gas is provided in a direction that forms an acute angle withthe straight line to blow the glass material away; and removing thethickness of the glass material.
 2. The method of claim 1 wherein thestream of the plasma is provided by outputting an inert gas through anozzle region to cause a dimple region within a vicinity of the centerregion of the melted material.
 3. The method of claim 2 wherein theinert gas comprises an argon gas characterized by a flow rate suitableto form the dimple region, and wherein the method further comprisesmaintaining a boundary region between the exposed inner region and theinterior region of the crucible.
 4. The method of claim 2 wherein thenozzle region is coupled to an argon gas source, the nozzle regioncomprising a ceramic material.
 5. The method of claim 2 wherein thedimple region provides an increased surface region for a plume tointeract with the melted material; wherein the dimple region has a depthof at least one centimeter.
 6. The method of claim 2 wherein the meltedmaterial comprises a viscosity of 0.7 Pascal-second.
 7. The method ofclaim 1 further comprising providing a cover gas to maintain the meltedmaterial within the crucible.
 8. The method of claim 1 furthercomprising providing a carrier gas configured to cause a portion ofevaporated melted material to return to the melted material.
 9. Themethod of claim 1 further comprising subjecting the raw silicon to asandblasting process to remove carbon raw material from the surface ofthe raw silicon.
 10. The method of claim 1 further comprising heatingthe crucible to about 1470° C. and cooling the silicon melt throughcontrolling the heater's output power to provide a slow continuouscooling rate, allowing the cooled solidified silicon to be easilyremoved from the quartz crucible due to changes in the expansioncoefficient of the crucible.
 11. The method of claim 1 wherein themelted material comprises a resulting phosphorous species of 1 ppm andless.
 12. The method of claim 1 wherein the thickness of glass materialcomprises silicon dioxide or aluminum dioxide.
 13. The method of claim 1wherein one or more metal impurities is one of copper, iron, manganese,nickel, aluminum, cobalt, chromium, or titanium.
 14. The method of claim1 wherein the thickness of glass material comprises an FexO_(y) species.15. The method of claim 1 wherein the slag material is selected from agroup consisting of CaCl₂ and MgCl₂.
 16. The method of claim 1 whereinthe slag material is water soluble.
 17. The method of claim 1 whereinthe water species is H2O in liquid form.
 18. The method of claim 1wherein the crucible comprises a width and a depth to facilitate amixing action within the exposed inner region and reduce a mixing actionwithin the exposed outer region of the melted material; wherein thedepth to the width has an aspect ratio of 2:1 or greater.
 19. The methodof claim 1 wherein the thickness of the glass material is floatingoverlying a portion of the melted material.
 20. A method for forminghigh quality silicon material for photovoltaic devices, the methodcomprising: transferring raw silicon material and a plurality of carbonspecies in a crucible having an interior region, the crucible being madeof a quartz material, the quartz material being capable of withstandinga temperature of at least 1400° C.; subjecting the raw silicon materialin the crucible to thermal energy to cause the raw silicon material tobe melted into a liquid state to form a melted material at a temperaturegreater than 1400° C., the melted material having an exposed regionbounded by the interior region of the crucible; subjecting an exposedinner region of the melted material to an energy source comprising anarc heater configured above the exposed region and spaced by a gapbetween the exposed region and a muzzle region of the arc heater tocause formation of a temperature profile within a vicinity of an innerregion of the exposed melted material while maintaining outer regions ofthe melted material at a temperature below a melting point of the quartzmaterial of the crucible; providing a plasma stream through a concentrichigh-pressure injection device configured at an angle, the concentrichigh-pressure injection device having an inner tube and an outer tube,the plasma stream being provided through the inner tube, the plasmastream having a velocity of greater than 1 meter per second and beingprovided within a vicinity of the exposed inner region of the meltedmaterial; providing a high-pressure injection gas through the outer tubeof the concentric high-pressure injection device; introducing a waterspecies comprising a slagging material into the stream of the plasma;interacting the water species and a portion of the melted material tocause formation of a glass material to absorb one or more metalimpurities from the melted material to form a thickness of the glassmaterial in the crucible; removing the thickness of the glass material;and removing exhaust generated in the reactor chamber during thepurification process in an upward manner via a venting device to preventremixing of the exhaust with a portion of the melted material, theventing device having a V-shaped path and including a horizontalreflecting part, a plurality of guiding grooves, and a plurality oflateral grooves coupled to the guiding grooves, the guiding groovesbeing coupled to the horizontal reflecting part.